? mitsubishi igbt modules ? ? ? cm100dus-12f ? high power switching use ? insulated type ? 1 february-2011 ? cm100dus-12f - 4 th generation fast switching igbt module - collector current i c ......... ....?............? 100 a collector-emitter voltage v ces ...........? 600 v maximum junction temperature t jmax ... 150 c flat base type copper base plate rohs directive compliant ul recognized under ul1557, file e323585 dual (half-bridge) application high frequency (30 khz ~ 60 khz) switching us e: induction heating, power supply, etc. outline drawing & internal connection dimension in mm ? internal connection ? tolerance otherwise specified ? division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 c1 e2 c2e1 g1 e1 e2 g2 di1 di2 tr1 tr2 rtc rtc ?
mitsubishi igbt modules cm100dus-12f high power switching use ? insulated type ? 2 february-2011 absolute maximum ratings (t j =25 c, unless otherwise specified) symbol item conditions rating unit v ces collector-emitter voltage g-e short-circuited 600 v v ges gate-emitter voltage c-e short-circuited 20 v i c t c =25 c (note.2) 100 i crm collector current pulse, repetitive (note.4) 200 a p tot t c =25 c (note.2, 5) 350 p tot ' total power dissipation t c '=25 c (note.3, 5) 445 w i e (note.1) t c =25 c (note.2) 100 i erm (note.1) emitter current (free wheeling diode forward current) pulse, repetitive (note.4) 200 a t j junction temperature - -40 ~ +150 t stg storage temperature - -40 ~ +125 c v isol isolation voltage terminals to base pl ate, rms, f=60 hz, ac 1 min 2500 v electrical characteristics (t j =25 c, unless otherwise specified) limits symbol item conditions min. typ. max. unit i ces collector-emitter cut-off current v ce =v ces , g-e short-circuited - - 1 ma i ges gate-emitter leakage current v ge =v ges , c-e short-circuited - - 20 a v ge(th) gate-emitter threshold voltage i c =10 ma, v ce =10 v 5 6 7 v i c =100 a (note.6) , t j =25 c 1.7 2.0 2.7 v cesat collector-emitter saturation voltage v ge =15 v t j =125 c - 1.95 - v c ies input capacitance - - 27 c oes output capacitance - - 1.8 c res reverse transfer capacitance v ce =10 v, g-e short-circuited - - 1.0 nf q g gate charge v cc =300 v, i c =100 a, v ge =15 v - 620 - nc t d(on) turn-on delay time - - 100 t r rise time v cc =300 v, i c =100 a, v ge =15 v, - - 80 t d(off) turn-off delay time - - 300 t f fall time r g =6.3 ? , inductive load - - 150 ns v ec (note.1) emitter-collector voltage i e =100 a (note.6) , g-e short-circuited - 2.0 2.6 v t rr (note.1) reverse recovery time v cc =300 v, i e =100 a, v ge =15 v, - - 150 ns q rr (note.1) reverse recovery charge r g =6.3 ? , inductive load - 1.9 - c e on turn-on switching energy per pulse v cc =300 v, i c =i e =100 a, - 1.55 - e off turn-off switching energy per pulse v ge =15 v, r g =6.3 ? , t j =125 c, - 2.2 - e rr (note.1) reverse recovery energy per pulse inductive load - 1.2 - mj r g internal gate resistance per switch - 0 - ? thermal resistance characteristics limits symbol item conditions min. typ. max. unit r th(j-c)q junction to case, per igbt - - 0.35 k/w r th(j-c)d thermal resistance (note.2) junction to case, per fwdi - - 0.70 k/w r th(c-s) contact thermal resistance (note.2) case to heat sink, per 1/2 module, thermal grease applied (note.7) - 0.07 - k/w r th(j-c')q junction to case, per igbt - - 0.28 k/w r th(j-c')d thermal resistance (note.3) junction to case, per fwdi - - 0.40 k/w mechanical characteristics limits symbol item conditions min. typ. max. unit m t main terminals m 5 screw 2.5 3.0 3.5 m s mounting torque mounting to heat sink m 6 screw 3.5 4.0 4.5 nm m weight - - 310 - g e c flatness of base plate on the centerline x, y (note.8) -100 - +100 m
mitsubishi igbt modules cm100dus-12f high power switching use ? insulated type ? 3 february-2011 recommended operating conditions (t a =25 c) limits symbol item conditions min. typ. max. unit v cc (dc) supply voltage applied across c1-e2 - 300 400 v geon gate (-emitter drive) voltage applied across g1-es1/g2-es2 13.5 15.0 16.5 v r g external gate resistance per switch 6.3 - 63 ? note.1: represent ratings and characteristics of the ant i-parallel, emitter-collector free wheeling diode (fwdi). note.2: case temperature (t c ) measured point is base plate side. (ref er to the figure of chip location) note.3: case temperature (t c ') and heat sink temperature (t s ') are defined on the each surfac e of base plate and heat sink just under the chips. (refer to the figure of chip location) the heat sink thermal resistance {r th(s-a) } should measure just under the chips. note.4: pulse width and repetition rate should be such that the device junction temperature (t j ) dose not exceed t jmax rating. note.5: junction temperature (t j ) should not increase beyond t jmax rating. note.6: pulse width and repetition rate should be su ch as to cause negligible temperature rise. (refer to the figure of test circuit) note.7: typical value is measured by using thermally conductive grease of =0.9 w/(mk). note.8: base plate flatness measurement points are as in the following figure. +: convex bottom bottom -: concave y x +: convex -: concave 3 mm bottom 3 mm 3 mm chip location (top view) dimension in mm, tolerance: 1 mm case temperature (t c ) measured point (base plate side) tr1/tr2: igbt, di1/di2: fwdi
mitsubishi igbt modules cm100dus-12f high power switching use ? insulated type ? 4 february-2011 test circuit and waveforms v ge =15 v v i c c1 c2e1 e2 es2 g2 es1 g1 short- circuited v ge =15 v i c c1 c2e1 e2 es2 g2 es1 g1 v short - circuited v i e c1 c2e1 e2 es2 g2 es1 g1 short- circuited short - circuited i e c1 c2e1 e2 es2 g2 es1 g1 v short - circuited short - circuited tr1 tr2 di1 di2 v cesat test circuit v ec test circuit ? t t f t r t d(on) i c 10% 90 % 90 % v ge v cc i e i c r g -v ge +v ge -v ge load ? ? ? 0 v 0 a + 0 v ce v ge 0 v t d(off) t i rr q rr =0.5i rr t rr 0.5i rr t t rr i e 0 a i e switching characteristics test circuit and waveforms t rr , q rr test waveform 0.1i cm i cm v cc v ce i c t 0 t i 0.1v cc 0.1v cc v cc i cm v ce i c t 0 0.1i cm t i i em v ec i e t 0 v t i t v cc 0 a igbt turn-on switching energy igbt turn-off switching energy fwdi reverse recovery energy turn-on / turn-off switching energy and reverse recovery ener gy test waveforms (integral time instruction drawing) ?
mitsubishi igbt modules cm100dus-12f high power switching use ? insulated type ? 5 february-2011 performance curves inverter part output characteristics (typical) collector-emitter saturation voltage characteristics (typical) t j =25 c 13 v 11 v 10 v 9.5 v v ge =15 v collector current i c (a) 0 20 40 60 80 100 120 140 160 180 200 012345 collector-emitter saturation voltage v cesat (v) 0 0.5 1 1.5 2 2.5 3 0 50 100 150 200 collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage characteristics (typical) free wheeling diode forward characteristics (typical) t j =25 c g-e short-circuited , t j =25 c collector-emitter saturation voltage v cesat (v) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 6 8 10 12 14 16 18 20 emitter current i e (a) 1 10 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 gate-emitter voltage v ge (v) emitter-collector voltage v ec (v) t j =125 c t j =25 c v ge =20 v 8.5 8 v 7.5 7 v 15 v 9 v i c =200 a i c =100 a i c =40 a
mitsubishi igbt modules cm100dus-12f high power switching use ? insulated type ? 6 february-2011 half-bridge switching characteristics (typical) free wheeling diode reverse recovery characteristics (typical) v cc =300 v, v ge =15 v, r g =6.3 ? , t j =125 c, inductive load v cc =300 v, v ge =15 v, r g =6.3 ? , t j =125 c, inductive load switching time (ns) 1 10 100 1000 110100 t rr (ns), i rr (a) 10 100 110100 collector current i c (a) emitter current i e (a) half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =300 v, v ge =15 v, r g =6.3 ? , t j =125 c, inductive load, per pulse v cc =300 v, i c /i e =100 a, v ge =15 v, t j =125 c, inductive load, per pulse switching energy (mj) reverse recovery energy (mj) 0.1 1 10 110100 switching energy (mj) reverse recovery energy (mj) 0.1 1 10 100 110100 collector current i c (a) emitter current i e (a) external gate resistance r g ( ? ) e on e off e rr e on e off e rr t d(on) t r t d(off) t f i rr t rr
mitsubishi igbt modules cm100dus-12f high power switching use ? insulated type ? 7 february-2011 capacitance characteristics (typical) gate charge characteristics (typical) g-e short-circuited, t j =25 c i c =100 a, t j =25 c capacitance (nf) 0.1 1 10 100 0.1 1 10 100 gate-emitter voltage v ge (v) 0 2 4 6 8 10 12 14 16 18 20 0 100 200 300 400 500 600 700 800 900 collector-emitter voltage v ce (v) gate charge q g (nc) transient thermal impedance characteristics (maximum) single pulse, t c '=25c normalized transient thermal impedance z th(j-c') 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 r th(j-c')q =0.28 k/w, r th(j-c')d =0.40 k/w time (s) c ies c oes c res v cc =200 v v cc =300 v
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